• DocumentCode
    767634
  • Title

    A Bubble Generation Mechanism for Ion-Implanted Bubble Devices

  • Author

    Urai, H.

  • Author_Institution
    Microelectronics Research Labs., NEC Corporation.
  • Volume
    1
  • Issue
    9
  • fYear
    1985
  • Firstpage
    1114
  • Lastpage
    1116
  • Abstract
    A new mechanism of bubble generation in ion-implanted bubble devices has been proposed based on minimum generation current characteristies. This model shows that bubble nucleation requires a 180° magnetic wall shift in the transition layer between the ion-implanted and bubble layers which can be used to logically explain bubble generation in ion-implanted devices.
  • Keywords
    Anisotropic magnetoresistance; Character generation; Circuits; Conductive films; Magnetic fields; Magnetization; Microelectronics; National electric code; Pulse generation; Space vector pulse width modulation;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1985.4549090
  • Filename
    4549090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=767634