DocumentCode
768912
Title
A Si bipolar monolithic RF bandpass amplifier
Author
Nguyen, Nhat M. ; Meyer, Robert G.
Author_Institution
California Univ., Berkeley, CA, USA
Volume
27
Issue
1
fYear
1992
fDate
1/1/1992 12:00:00 AM
Firstpage
123
Lastpage
127
Abstract
The application of monolithic inductors to the realization of Si bipolar monolithic RF amplifiers is investigated. As a test vehicle, a bipolar monolithic bandpass amplifier was fabricated and characterized. A 4-nH silicon integrated inductor was used to achieve a peak S 21 gain of 8 dB, a simulated noise figure of 6.4 dB, and a matched input impedance of 50 Ω in the frequency range of 1-2 GHz
Keywords
MMIC; active filters; band-pass filters; bipolar integrated circuits; inductors; microwave amplifiers; microwave filters; 1 to 2 GHz; 6.4 dB; 8 dB; L-band; Si; matched input impedance; monolithic RF bandpass amplifier; monolithic inductors; Bandwidth; Feedback amplifiers; Feedback circuits; Gain; Impedance matching; Inductors; Microwave circuits; Noise figure; Output feedback; Radio frequency; Radiofrequency amplifiers; Shunt (electrical); Silicon; Testing; Vehicles;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.109567
Filename
109567
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