Total-dose characterization of a high-performance radiation-hardened 1.0-μm CMOS sea-of-gates technology

Author

Yoshii, I. ; Hama, K. ; Maeguchi, K. ; Takatsuka, S. ; Hatano, Hiroshi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2089

Lastpage

2096

Abstract

A radiation-hardened CMOS sea-of-gates technology with 1.0-μm geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this technology is radiation hardened up to a total dose of 1 Mrad(SiO₂) and may be functional at 10 Mrad(SiO₂). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics

Keywords

CMOS integrated circuits; VLSI; integrated circuit technology; logic arrays; radiation hardening (electronics); 1 micron; 10E6 rad; 1E6 rad; 2K-gate test chip; analytic model; changes in circuit performance; compatible with commercial technologies; postirradiation effects; radiation-hardened CMOS sea-of-gates technology; switching of CMOS circuits; total dose characterization; transistor characteristics; CMOS technology; Circuit optimization; Circuit testing; Fabrication; Integrated circuit technology; Laboratories; Microelectronics; Routing; Semiconductor devices; Very large scale integration;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101232

Filename

101232