First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

Author

Xiaobing Mei ; Yoshida, Wayne ; Lange, Mike ; Lee, Jane ; Zhou, Joe ; Po-Hsin Liu ; Leong, Kevin ; Zamora, Alex ; Padilla, Jose ; Sarkozy, Stephen ; Lai, Richard ; Deal, William R.

Author_Institution

Northrop Grumman Corp., Redondo Beach, CA, USA

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

327

Lastpage

329

Abstract

We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor (HEMT) process demonstrating amplification at 1 THz (1000 GHz) with 9-dB measured gain at 1 THz. This milestone was achieved with a 25-nm InP HEMT transistor, which exhibits 3.5-dB maximum available gain at 1 and 1.5 THz projected f_MAX.

Keywords

HEMT integrated circuits; III-V semiconductors; amplification; high electron mobility transistors; indium compounds; submillimetre wave amplifiers; submillimetre wave integrated circuits; terahertz wave devices; HEMT transistor; InP; amplification; frequency 1 THz; frequency 1.5 THz; gain 3.5 dB; gain 9 dB; high electron mobility transistor process; size 25 nm; terahertz monolithic integrated circuit amplifier; Frequency measurement; Gain; Gain measurement; HEMTs; Indium phosphide; Logic gates; 25 nm gate; 25 nm gate,; High electron mobility transistor (HEMT); Terahertz Monolithic Integrated Circuit (TMIC); high frequency; indium phosphide (InP); terahertz monolithic integrated circuit (TMIC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2407193

Filename

7047678