DocumentCode
770423
Title
0.86-nm CET Gate Stacks With Epitaxial 
High- 
Dielectrics and FUSI NiSi Metal Electrodes
Author
Gottlob, H.D.B. ; Echtermeyer, T. ; Schmidt, M. ; Mollenhauer, T. ; Efavi, J.K. ; Wahlbrink, T. ; Lemme, M.C. ; Czernohorsky, M. ; Bugiel, E. ; Fissel, A. ; Osten, H.J. ; Kurz, H.
Author_Institution
Adv. Micro-Electron. Center, Aachen
Volume
27
Issue
10
fYear
2006
Firstpage
814
Lastpage
816
Abstract
In this letter, ultrathin gadolinium oxide (Gd2O3 ) high-k gate dielectrics with complementary-metal-oxide-semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET=0.86 nm. The extracted dielectric constant is k=13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond
Keywords
CMOS integrated circuits; MOS capacitors; gadolinium compounds; high-k dielectric thin films; leakage currents; nickel alloys; permittivity; silicon alloys; 0.86 nm; 3.1 nm; Gd2O3; MOS capacitors; complementary metal oxide semiconductor; dielectric constant; epitaxial dielectric; gate dielectric stacks; leakage currents; metal gate electrodes; rare earth oxide; CMOS technology; Capacitance; Dielectric materials; Dielectric substrates; Electrodes; Leakage current; MOS capacitors; Molecular beam epitaxial growth; Plasma stability; Silicon; Epitaxial dielectric; NiSi; fully silicided (FUSI); high-; metal gate; rare earth oxide;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.882581
Filename
1704909
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