Preparation of Bi, Ga-substituted Garnet Films on Glass Substrates by RF Sputtering I

The effects of ion substitution at rare earth sites and iron sites in garnet was studied to reduce crystallization temperature. Films formed using a Bi, Ga-substituted YIG target on various types of glass substrate were amorphous at low substrate temperatures. Crystallization occurred at around 660°C for a Bi-substitution amount in the range 1.2 to 1.4, but combining Bi-substitution amount over 2 and Ga-substitution enabled reduction of crystallization temperature to around 520°C, though high Bi substitution makes the garnet phase unstable.