Effects of Ion-Implantation in Magnetic Garnet

Ion implantation in magnetic garnet films induces anisotropy field change ¿Hk. The primary origin of the ¿Hk is the stress-induced anisotropy, but it has been reported that ion implantation also induces nonmagnetostrictive anisotropy change due to growth-induced anisotropy suppression. Hydrogen ion implantation induces a large ¿Hk due to the chemical effects of the hydrogen in the implanted layer. The ¿Hk in ion-implanted garnet is significantly increased by exposing implanted films to plasma of hydrogen or rare gases. These large anisotropy changes in hydrogen implantation and plasma exposure are attributed to the change in valence state of Fe ions. This reports reviews these recent developments on ion-implanted garnets.