• DocumentCode
    771537
  • Title

    GaInAsP/AlGaInP-based near-IR (780 nm) vertical-cavity surface-emitting lasers

  • Author

    Schneider, R.P., Jr. ; Hagerott-Crawford, M.

  • Author_Institution
    Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    31
  • Issue
    7
  • fYear
    1995
  • fDate
    3/30/1995 12:00:00 AM
  • Firstpage
    554
  • Lastpage
    556
  • Abstract
    Near-infra-red (760-780 nm) vertical-cavity surface-emitting laser (VCSEL) diodes with GaInAsP-based active-region heterostructures are demonstrated for the first time. The devices consist of GaInAsP/GaInP/AlGaInP-based quantum-well active regions and AlAs/Al0.25Ga0.75As distributed Bragg reflectors. Different-sized devices emitting in the 760-780 nm-wavelength range exhibit threshold currents in the 3-10 mA range, threshold voltages of 2.1 V and peak power output >4 mW
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; 2.1 V; 3 to 10 mA; 4 mW; 760 to 780 nm; GaInAsP-AlGaInP; active-region heterostructures; distributed Bragg reflectors; near-IR lasers; peak power output; quantum-well active regions; threshold currents; threshold voltages; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950397
  • Filename
    381802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771537