• DocumentCode
    771770
  • Title

    Specific contact resistivity of InGaAs/InP p-isotype heterojunctions

  • Author

    Bowers, John E. ; Hafich, M.J. ; Silvestre, P. ; Woods, L.M. ; Robinson, G.Y.

  • Volume
    28
  • Issue
    17
  • fYear
    1992
  • Firstpage
    1568
  • Lastpage
    1570
  • Abstract
    The specific contact resistivity of lattice matched InGaAs/InP p-isotype heterojunction has been measured through the use of an interface transmission line model structure. The measured resistance values are comparable to or greater than those of the metal/semiconductor interface and depend heavily on the doping and the abrupt or graded nature of the interface.
  • Keywords
    III-V semiconductors; contact resistance; gallium arsenide; indium compounds; ohmic contacts; semiconductor junctions; InGaAs-InP; doping; graded interface; hole transport; interface transmission line model structure; low resistance ohmic contacts; p-isotype heterojunctions; specific contact resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920998
  • Filename
    156256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771770