Mobility and threshold-voltage comparison between [110]- and (100)-oriented ultrathin-body silicon MOSFETs

Author

Tsutsui, Gen ; Hiramoto, Toshiro

Author_Institution

Univ. of Tokyo

Volume

53

Issue

10

fYear

2006

Firstpage

2582

Lastpage

2588

Abstract

Mobility and threshold-voltage (V_th) behaviour in (110) and (100) ultrathin body (UTB) n- and p-MOSFETs are experimentally examined, and performance is compared between (110) and (100) UTB CMOSFETs based on the estimated propagation delay time. Out-of-plane effective mass (m_z) is the key parameter that causes the difference in mobility and V_th behavior between (110) and (100). Large V_th increase and monotonic mobility degradation, as a decrease of the silicon-on-insulator (SOI) thickness, are observed in (110) UTB nMOSFETs due to a smaller m_z than (100). Mobility enhancement in (100) UTB double-gate (DG) pMOSFETs is demonstrated, which may be attributable to volume inversion. Propagation delay time is estimated based on the measured mobility, and delay is improved by 30% in (110) UTB DG CMOSFETs compared to conventional bulk CMOSFETs

Keywords

MOSFET; carrier mobility; elemental semiconductors; semiconductor device testing; silicon-on-insulator; Si; double-gate CMOSFET; mobility behavior; monotonic mobility degradation; nMOSFET; pMOSFET; silicon-on-insulator thickness; threshold-voltage behavior; ultrathin body silicon MOSFET; CMOSFETs; Degradation; Delay estimation; Doping; Effective mass; MOSFET circuits; Potential well; Propagation delay; Silicon on insulator technology; Time measurement; (100); (110); Double-gate (DG); mobility; out-of-plane effective mass; silicon-on-insulator (SOI); threshold voltage; ultrathin body (UTB);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.882397

Filename

1705113