Demonstration of the n-channel vertical-cavity double-heterostructure optoelectronic switching laser and heterostructure field effect transistor

Author

Cooke, P. ; Evaldsson, P.A. ; Taylor, G.W.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

605

Lastpage

608

Abstract

Optoelectronic integration of vertical-cavity surface-emitting lasers would be highly desirable for future optical interconnect and preprocessing applications. Configuring the double-heterostructure optoelectronic switch (DOES) as such a laser offers the potential for integration and utilization of the bistable switching action for thresholding and photonic switching operations. The authors present the initial results of fabricating the DOES as a simple, two-terminal, surface-emitting laser and as a heterostructure field-effect transistor (HFET). Pulsed threshold currents of 10 mA are obtained in conjunction with excellent, high-voltage contrast switching. The HFET had a peak transconductance of 40 mS/mm and a peak drain to source current density of 120 mA/mm.<>

Keywords

field effect integrated circuits; integrated optoelectronics; laser cavity resonators; optical bistability; optical switches; semiconductor laser arrays; 10 mA; HFET; VCSEL; arrays; bistable switching action; heterostructure field effect transistor; high-voltage contrast switching; n-channel vertical-cavity double-heterostructure optoelectronic switching laser; optoelectronic integration; peak drain to source current density; peak transconductance; photonic switching; pulsed threshold currents; surface-emitting lasers; thresholding; HEMTs; MODFETs; Optical bistability; Optical devices; Optical interconnections; Optical sensors; Surface emitting lasers; Switches; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141983

Filename

141983