A novel offset gated polysilicon thin film transistor without an additional offset mask

Author

Min, Byung-Hyuk ; Park, Cheol-Min ; Han, Min-Koo

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

16

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

161

Lastpage

163

Abstract

We have proposed a novel offset gated polysilicon TFT fabricated without an offset mask in order to reduce leakage current and suppress the kink effect. The photolithographic process steps of the new TFT device are identical to those of conventional non-offset structure TFT´s and an additional mask to fabricate an offset structure is not required in our device. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The novel TFT also exhibits a considerable reduction in the kink effect because a very thin film TFT may be easily fabricated due to the elimination of the contact over-etch problem.<>

Keywords

MOSFET; elemental semiconductors; leakage currents; photolithography; silicon; thin film transistors; NMOSFET; Si; kink effect suppression; leakage current reduction; offset gated TFT; photolithographic process; polysilicon TFT; thin film transistor; Active matrix liquid crystal displays; Amorphous silicon; Annealing; Etching; Fabrication; Leakage current; Semiconductor films; Substrates; Thin film devices; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.382226

Filename

382226