DocumentCode
774624
Title
Si/Si/sub 1-x/Gex heterojunction bipolar transistors with high breakdown voltage
Author
Hobart, K.D. ; Kub, F.J. ; Papanicoloau, N.A. ; Kruppa, W. ; Thompson, P.E.
Author_Institution
Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
Volume
16
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
205
Lastpage
207
Abstract
Heterojunction bipolar transistors are desirable for microwave applications because a low base resistance can be achieved yielding high maximum frequency of oscillation. Here we report Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors with high breakdown voltages and excellent small-signal microwave characteristics. The transistors structures were grown by molecular beam epitaxy and fabricated by a double-mesa process. Measured f/sub T/ and f/sub max/ were 10 and 22 GHz, respectively, for transistors with BV/sub CBO/ of 40 V.<>
Keywords
Ge-Si alloys; electric breakdown; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; 10 GHz; 22 GHz; 40 V; Si-SiGe; base resistance; breakdown voltage; double-mesa process; heterojunction bipolar transistors; maximum frequency of oscillation; microwave applications; molecular beam epitaxy; small-signal microwave characteristics; Cutoff frequency; Delay effects; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave transistors; Molecular beam epitaxial growth; Silicon germanium; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.382241
Filename
382241
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