Optical gain and luminescence of a ZnO-MgZnO quantum well

Author

Ahn, D. ; Park, S.-H. ; Park, E.H. ; Yoo, T.K.

Author_Institution

Inst. of Quantum Inf. Process. & Syst., Univ. of Seoul, South Korea

Volume

18

Issue

2

fYear

2006

Firstpage

349

Lastpage

351

Abstract

The optical gain and the luminescence of a ZnO quantum well with MgZnO barriers is studied theoretically. We calculated the non-Markovian optical gain and the luminescence for the strained-layer wurtzite quantum well taking into account the excitonic effects. It is predicted that both optical gain and luminescence are enhanced for the ZnO quantum well when compared with those of the InGaN-AlGaN quantum well structure due to the significant reduction of the piezoelectric effects in the ZnO-MgZnO systems.

Keywords

II-VI semiconductors; excitons; magnesium compounds; photoluminescence; piezoelectricity; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; ZnO-MgZnO; ZnO-MgZnO quantum well; excitonic effects; luminescence; nonMarkovian optical gain; piezoelectric effects; strained-layer wurtzite quantum well; Capacitive sensors; Excitons; Luminescence; Optical polarization; Photonic band gap; Piezoelectric effect; Piezoelectric polarization; Plasma temperature; Quantum mechanics; Zinc oxide; InGaN–AlGaN quantum well; ZnO–MgZnO quantum well; luminescence; many-body effect exciton; non-Markovian; optical gain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.861972

Filename

1564151