DocumentCode
777651
Title
Dose rate and annealing effects on total dose response of MOS and bipolar circuits
Author
Carrière, T. ; Beaucour, J. ; Gach, A. ; Johlander, B. ; Adams, L.
Author_Institution
Matra Marconi Space, France
Volume
42
Issue
6
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1567
Lastpage
1574
Abstract
Different part types of major technology families were irradiated in order to study dose rate and post irradiation annealing effects. Results confirm that degradation of MOS technologies at low dose rates can be predicted from high dose rate and annealing measurements, while this is not possible for bipolar linear ICs. The ESA/SCC22900 test method is discussed
Keywords
MOS integrated circuits; annealing; bipolar integrated circuits; integrated circuit testing; radiation effects; ESA/SCC22900 test method; MOS ICs; MOS technologies degradation; annealing effects; bipolar linear ICs; dose rate; post irradiation annealing effects; total dose response; Annealing; Automatic testing; BiCMOS integrated circuits; Bipolar integrated circuits; Circuit testing; Degradation; Interface states; Performance evaluation; Random access memory; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.488751
Filename
488751
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