Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation

Author

Hiemstra, David M.

Author_Institution

Spar Environ. Syst., Brampton, Ont., Canada

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1615

Lastpage

1621

Abstract

Dose rate and total dose dependence of the 1/f noise performance of a custom GaAs MESFET operational amplifier during irradiation are presented. Dose rate dependent 1/f noise degradation during irradiation is believed to be due to electron trapping in deep levels, enhanced by backgating and shallow traps excited during irradiation. The reduction of this effect with accumulated total dose is believed to be due a reduction of deep level site concentration associated with substitutional oxygen. Post irradiation 1/f noise degradation is also presented. The generation-recombination noise observed post irradiation can be attributed to the production of shallow traps due to ionizing radiation

Keywords

1/f noise; III-V semiconductors; MESFET integrated circuits; deep levels; electron traps; field effect analogue integrated circuits; gallium arsenide; gamma-ray effects; integrated circuit noise; integrated circuit testing; operational amplifiers; 1/f noise degradation; 1/f noise performance; GaAs; MESFET opamps; backgating; custom op amps; deep levels; dose rate dependence; electron trapping; generation-recombination noise; irradiation; operational amplifier; shallow traps; substitutional oxygen; total dose dependence; Degradation; Electron traps; Gallium arsenide; Inspection; Ionizing radiation; MESFETs; Operational amplifiers; Pulse amplifiers; Testing; Working environment noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.488757

Filename

488757