DocumentCode
777725
Title
Simulating total-dose and dose-rate effects on digital microelectronics timing delays using VHDL
Author
Brothers, C.P., Jr. ; Pugh, R.D.
Author_Institution
Microelectron. & Photonics Res. Branch, USAF Phillips Lab., Kirtland AFB, NM, USA
Volume
42
Issue
6
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1628
Lastpage
1635
Abstract
This paper describes a fast timing simulator based on Very High Speed Integrated Circuit (VHSIC) Hardware Description Language (VHDL) for simulating the timing of digital microelectronics in pre-irradiation, total dose, and dose-rate radiation environments. The goal of this research is the rapid and accurate timing simulation of radiation-hardened microelectronic circuits before, during, and after exposure to ionizing radiation. The results of this research effort were the development of VHDL compatible models capable of rapid and accurate simulation of the effect of radiation on the timing performance of microelectronic circuits. The effects of radiation for total dose at 1 Mrad(Si) and dose rates up to 2×1012 rads(Si) per second were modeled for a variety of Separation by IMplantation of OXygen (SIMOX) circuits. In all cases tested, the VHDL simulations ran at least 600 times faster than SPICE while maintaining a timing accuracy to within 15 percent of SPICE values
Keywords
SIMOX; circuit analysis computing; delays; digital integrated circuits; hardware description languages; radiation effects; timing; SIMOX circuits; VHDL compatible models; VHDL simulations; VHSIC Hardware Description Language; digital microelectronics timing delays; dose-rate effects; fast timing simulator; radiation environments; total-dose effects; Circuit simulation; Circuit testing; Hardware design languages; Ionizing radiation; Microelectronics; Oxygen; Radio access networks; SPICE; Timing; Very high speed integrated circuits;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.488759
Filename
488759
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