A fast, low power CMOS amplifier on SOI for sensor applications in a radiation environment of up to 20 Mrad(Si)

Author

Aspell, P. ; Faccio, F. ; Jarron, P. ; Heijine, E.H.M. ; Borel, G.

Author_Institution

CERN, Geneva, Switzerland

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1636

Lastpage

1640

Abstract

The design and measurements of a 0.5 mW CMOS current mode amplifier in a SOI radiation hard technology are reported for a total dose of 20 Mrad(Si). It is designed for the fast readout of particle detectors in high energy physics experiments but could equally be applied to the readout of any capacitive sensor in a radiation environment. A pre-irradiation gain of 43.3 mV/4fC, rise time of 17 ns and Equivalent Noise Charge (ENC) of 1436e+78e/pF (1.97nV(Hz)^-1/2) is achieved. Measurements are reported at 0, 10 Mrad(Si) and 20 Mrad(Si) with the evolution showing changes in peak voltage, rise time, parallel noise and series noise of -23%, 26%, 25% and 60% respectively after 20 Mrad(Si)

Keywords

CMOS analogue integrated circuits; detector circuits; electric sensing devices; instrumentation amplifiers; integrated circuit noise; nuclear electronics; radiation hardening (electronics); silicon radiation detectors; silicon-on-insulator; 0.5 mW; 17 ns; 20 Mrad; SOI radiation hard technology; Si; capacitive sensor; equivalent noise charge; fast readout; gain; high energy physics; low power CMOS current mode amplifier; particle detector; rise time; Capacitance; Detectors; Digital audio players; Energy consumption; MOSFET circuits; Noise generators; Pulse amplifiers; Transconductance; Voltage; White noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.488760

Filename

488760