Radiation evaluation of an advanced 64 Mb 3.3 V DRAM and insights into the effects of scaling on radiation hardness

Author

Shaw, D.C. ; Swift, G.M. ; Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1674

Lastpage

1680

Abstract

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished

Keywords

DRAM chips; failure analysis; radiation hardening (electronics); 16 Mbit; 3.3 V; 64 Mbit; IBM LUNA-ES DRAM; Micron DRAM; failure modes; ionizing radiation; radiation hardness; retention time; scaling; threshold voltage; Circuit testing; Ionizing radiation; Laboratories; Mars; Propulsion; Random access memory; Space technology; System testing; Threshold voltage; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.488765

Filename

488765