• DocumentCode
    778083
  • Title

    High-performance long-wavelength InGaAs=GaAs multiple quantum-well lasers grown by molecular beam epitaxy

  • Author

    Adolfsson, G. ; Wang, S.M. ; Sadeghi, M. ; Larsson, A.

  • Author_Institution
    Dept. of Microelectron. & Nanoscience, Chalmers Univ. of Technol., Goteborg
  • Volume
    43
  • Issue
    8
  • fYear
    2007
  • Firstpage
    454
  • Lastpage
    456
  • Abstract
    High-quality 1.2 mum InGaAs/GaAs single and triple quantum-well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm2 /well is achieved for a 100 times1000 mum laser
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; 1.2 micron; InGaAs-GaAs; high-performance long-wavelength GaAs multiple quantum-well lasers; molecular beam epitaxy; threshold current density; triple quantum-well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070279
  • Filename
    4155596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=778083