Minimum Charge Detection Using Selected Tunnel Diodes and Charge Multiplying Semiconductors

The charge multiplying semiconductor detector has unique characteristics as a charge amplifier in a circuit containing a tunnel diode biased for charge detection. The relationship between the tunnel diode junction capacitance and switching speed to the electrical parameters of the multiplying detector will be discussed for minimum charge detection. Experimental data will be presented for an instrument using these principles that has a charge sensitivity of 10-16 coulombs. The simplicity and small volume that can be obtained using this technique can result in considerable economic advantages in the construction of large detector arrays for low energy particle detection.