• DocumentCode
    779068
  • Title

    Polarization-independent all-optical switching in a nonlinear GaInAsP-InP highmesa waveguide with a vertically etched Bragg reflector

  • Author

    Jeong, Seok-Hwan ; Kim, Hyo-Chang ; Mizumoto, Tetsuya ; Wiedmann, Jörg ; Arai, Shigehisa ; Takenaka, Mitsuru ; Nakano, Yoshiaki

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
  • Volume
    38
  • Issue
    7
  • fYear
    2002
  • fDate
    7/1/2002 12:00:00 AM
  • Firstpage
    706
  • Lastpage
    715
  • Abstract
    We have theoretically designed and experimentally demonstrated polarization-independent all-optical switching in a nonlinear GaInAsP-InP highmesa distributed feedback (DFB) waveguide. The device, which is composed of a highmesa waveguide stripe and a vertically etched Bragg reflector, can be simply fabricated using one-step electron beam lithography and a reactive ion etching process. The device is suitable for integration with other photonic devices such as semiconductor optical amplifiers and wavelength converters. The structural birefringence of the device has a dependence on the waveguide parameters such as the refractive index and thickness of core and cladding. The structural birefringence was successfully eliminated by adjusting the width of the highmesa waveguide. The nonlinear vertical-groove DFB highmesa waveguide is attractive for a polarization-independent all-optical switch from the viewpoint of a large grating coupling coefficient, as compared with a grating-loaded DFB highmesa waveguide. The polarization dependence of the grating coupling coefficient has also been investigated experimentally. It is possible to obtain the polarization-independent grating coupling coefficient by adjusting the grating depth in the vertical-groove DFB highmesa waveguide, together with structural zero-birefringence of the device. Polarization-independent all-optical thresholding and bistable switching operations have been successfully demonstrated in the nonlinear vertical-groove DFB highmesa waveguide
  • Keywords
    III-V semiconductors; diffraction gratings; electron beam lithography; gallium arsenide; gallium compounds; indium compounds; integrated optics; light polarisation; multiplexing; nonlinear optics; optical bistability; optical communication equipment; optical fabrication; optical switches; optical waveguides; sputter etching; DFB waveguide; GaInAsP-InP; bistable switching operations; cladding; core; distributed feedback waveguide; grating depth; large grating coupling coefficient; nonlinear GaInAsP-InP high mesa waveguide; nonlinear vertical-groove DFB high mesa waveguide; one-step electron beam lithography; photonic devices; polarization dependence; polarization-independent all-optical switch; polarization-independent all-optical switching; polarization-independent all-optical thresholding; polarization-independent grating coupling coefficient; reactive ion etching process; refractive index; semiconductor optical amplifiers; structural birefringence; structural zero-birefringence; vertical-groove DFB high mesa waveguide; vertically etched Bragg reflector; waveguide parameters; wavelength converters; Birefringence; Distributed feedback devices; Electron beams; Etching; Gratings; Optical waveguide theory; Optical waveguides; Polarization; Semiconductor waveguides; Switches;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2002.1017579
  • Filename
    1017579