Characteristics of 0.2 /spl mu/m depletion and quasi-enhancement mode self-aligned gate capless p-HEMTs

Author

Kim, Tae-Woo ; Kim, Do-Hyeon ; Shin, Soo-Hwan ; Jo, S.-J. ; Jang, Ji Hoon ; Song, Jong-In

Author_Institution

Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Buk-Gu Gwangju

Volume

42

Issue

20

fYear

2006

fDate

9/28/2006 12:00:00 AM

Firstpage

1178

Lastpage

1179

Abstract

Characteristics of 0.2 mum depletion mode (D) and quasi-enhancement mode (QE) capless InAlAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and sub-threshold characteristics owing to the increased gate-to-channel aspect ratio implemented by using a buried Pt technology. The maximum g_m, I_ON/I_OFF, sub-threshold slope, f_T, and f_max of the QE SAG capless p-HEMT were 1.22 S/mm, 2.11times10⁵, 65 mV/dec, 210 GHz and 250 GHz, and those of the D SAG capless p-HEMT were 1.12 S/mm, 1.27times10⁴, 78 mV/dec, 185 GHz and 225 GHz. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46%

Keywords

III-V semiconductors; aluminium compounds; buried layers; gallium arsenide; high electron mobility transistors; indium compounds; platinum; 0.2 micron; 185 GHz; 210 GHz; 225 GHz; 250 GHz; InAlAs-InGaAs; buried Pt technology; capless p-HEMT; depletion mode; quasienhancement mode; self-aligned gate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20062431

Filename

1706045