• DocumentCode
    780109
  • Title

    Effect of collector lateral scaling on performance of high-speed SiBe HBTs with f/sub T/>300 GHz

  • Author

    Rieh, Jae-Sung ; Khater, M. ; Jeseph, A. ; Freeman, G. ; Ahlgren, D.

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seongbuk Seoul
  • Volume
    42
  • Issue
    20
  • fYear
    2006
  • fDate
    9/28/2006 12:00:00 AM
  • Firstpage
    1180
  • Lastpage
    1181
  • Abstract
    The effect of collector lateral scaling on the performance of 300 GHz-level SiGe HBTs is investigated. Peak fT and fmax exhibited an initial improvement followed by a degradation with decreasing collector width. Possible causes behind the observed trend are discussed in terms of RC delay and the Kirk effect
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device breakdown; submillimetre wave transistors; 300 GHz; Kirk effect; RC delay; SiGe; collector lateral scaling effect; heterojunction bipolar transistor; high-speed HBT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20061645
  • Filename
    1706046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780109