DocumentCode
780509
Title
DC broken down MOSFET model for circuit reliability simulation
Author
Fernández, R. ; Rodríguez, R. ; Nafría, M. ; Aymerich, X.
Author_Institution
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Spain
Volume
41
Issue
6
fYear
2005
fDate
3/17/2005 12:00:00 AM
Firstpage
368
Lastpage
370
Abstract
A simple model for MOSFETs with broken down gate oxides is presented. With a unique simple equivalent circuit and a reduced number of parameters, the model is able to describe the performance of broken down MOSFETs, and can be easily introduced in circuit simulators. The breakdown hardness and position along the channel are taken into account by simply varying the model parameters.
Keywords
MOSFET; circuit reliability; circuit simulation; equivalent circuits; semiconductor device breakdown; semiconductor device models; DC broken down MOSFET model; breakdown hardness; breakdown position; circuit reliability simulation; dielectric breakdown; equivalent circuit; gate oxide breakdown;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057422
Filename
1421205
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