• DocumentCode
    780555
  • Title

    Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors

  • Author

    Blayac, S. ; Kahn, M. ; Riet, M. ; Berdaguer, F.P. ; Godin, J.

  • Author_Institution
    R&I/Opto, Alcatel Alsthom Recherche, Marcoussis, France
  • Volume
    39
  • Issue
    17
  • fYear
    2003
  • Firstpage
    1282
  • Lastpage
    1283
  • Abstract
    A new analytic method is presented to partition precisely the base-collector capacitance into intrinsic and extrinsic parts in bipolar transistors. It is based on base-resistance extraction measurements and requires only S-parameter measurement. This method has been successfully applied to InP/InGaAs heterojunction bipolar transistors and its accuracy has been assessed.
  • Keywords
    III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; S-parameter measurement; base resistance; base-collector capacitance; parameter extraction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030834
  • Filename
    1231326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780555