• DocumentCode
    780849
  • Title

    Further development of the Heavy Ion Cross section for single event UPset: model (HICUP)

  • Author

    Connell, L.W. ; Sexton, F.W. ; Prinja, A.K.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    2026
  • Lastpage
    2034
  • Abstract
    HICUP models the angular dependent heavy ion upset cross section. It pulls together many of the parameters and concepts used to characterize the Single Event Upset (SEU) phenomena, unifying them in a single cohesive model. HICUP is based on a Rectangular Parallelepiped (RPP) geometry for the sensitive volume and the Weibull density function for the upset threshold energy. Excellent agreement is obtained between the model and heavy ion test data. HICUP is used to derive the correct scaling laws for transforming angular cross section data to normal incidence, reconciling two previously proposed inverse cosine scaling corrections. The angle-integrated HICUP model, I-HICUP, is used in Galactic Cosmic Ray (GCR) upset rate calculations with results nearly identical to the Space Radiation code. Letaw has produced an automated SEU parameter fitting routine based on HICUP and the χ2 method. It ferrets out the best-fit critical SEU parameters embedded within the raw angular test data, including charge collection depth and funnel length. His method couples directly to the upset rate calculation in a self-consistent manner eliminating the need to arbitrarily assume a device depth. Results of this new procedure are presented
  • Keywords
    Weibull distribution; cosmic ray interactions; errors; integrated circuit modelling; ion beam effects; HICUP model; Weibull density function; angular dependence; charge collection depth; funnel length; galactic cosmic rays; heavy ion cross section; parameter fitting; rectangular parallelepiped; scaling law; single event upset; Azimuth; Density functional theory; Geometry; Integral equations; Ion beams; Random processes; Random variables; Shape; Silicon; Stochastic processes;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.489249
  • Filename
    489249