P-N Semiconductor Detectors for Severe Environmental Conditions

Fabrication technology and characteristics of totally depleted radiation detectors prepared by planar techniques will be described. These devices prepared from p-type silicon with resistivities from 500 - 50,000 ohm-cm receive a boron diffusion, an oxidation step and a phosphorus diffusion step. All contacts utilise ultrasonic bonding. The devices will operate as detectors over the temperature range 77°K to 150°C. Detailed performance of these units will be presented.