DocumentCode
784225
Title
Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
Author
Spiegel, Solon J. ; Ritter, Dan ; Hamm, R.A. ; Feygenson, A. ; Smith, P.R.
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume
42
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
1059
Lastpage
1064
Abstract
An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated
Keywords
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBT; InP-GaInAs; extraction technique; extrinsic base collector capacitance; extrinsic base resistance; heterojunction bipolar transistor; small-signal equivalent circuit; Bipolar transistors; Capacitance; Circuit testing; Delay effects; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Indium phosphide; Parameter extraction; Scattering parameters;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.387237
Filename
387237
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