Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry

Author

Wu, I-Fan ; Riant, Isabelle ; Verdiell, Jean-Marc ; Dagenais, Mario

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

4

Issue

9

fYear

1992

Firstpage

991

Lastpage

993

Abstract

Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on a traveling-wave laser amplifier facet. In order to obtain a facet reflectivity of 10/sup -4/ or less, the index of refraction and the layer thickness of single-layer coatings have to be controlled to better than 0.03 and 30 AA, respectively. An innovative approach to highly controlled antireflection layer deposition based on in situ real-time ellipsometry is presented. Index control within +or-0.01 and a facet reflectivity on the order of 10/sup -4/ are reproducibly obtained.<>

Keywords

antireflection coatings; ellipsometry; laser accessories; laser variables measurement; optical films; reflectivity; refractive index; semiconductor lasers; vacuum deposition; facet reflectivity; high-quality single-layer antireflection coating; highly controlled antireflection layer deposition; in situ monitoring; index control; index of refraction; layer thickness; real-time ellipsometry; semiconductor laser amplifiers; single-layer coatings; traveling-wave laser amplifier facet; Coatings; Ellipsometry; Monitoring; Optical films; Optical interconnections; Optical refraction; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers; Thickness control;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157125

Filename

157125