High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method

Author

Wang, Kuan-Ti ; Chao, Tien-Sheng ; Wu, Woei-Cherng ; Chiang, Tsung-Yu ; Wu, Yi-Hong ; Yang, Wen-Luh ; Lee, Chien-Hsing ; Hsieh, Tsung-Min ; Liou, Jhyy-Cheng ; Wang, Shen-De ; Chen, Tzu-Ping ; Chen, Chien-Hung ; Lin, Chih-Hung ; Chen, Hwi-Huang

Author_Institution

Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

30

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

659

Lastpage

661

Abstract

A high programming speed with a low-power-consumption wrapped-select-gate poly-Si-oxide-nitride-oxide-silicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (I _PGM) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.

Keywords

CMOS memory circuits; flash memories; high-speed integrated circuits; low-power electronics; DT mode; DTSSI programming method; WSG-SONOS flash memory; dynamic MOSFET; dynamic threshold source-side-injection; high programming speed; high-speed multilevel wrapped-select-gate SONOS memory; memory density; programming current; time 100 ns; Dynamic-threshold; memory; poly-Si-oxide-nitride-oxide-silicon (SONOS);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2019255

Filename

4895716