DocumentCode
786450
Title
Room temperature CW operation of orange light (625 nm) emitting InGaAlP laser
Author
Rennie, J. ; Okajima, M. ; Watanabe, Manabu ; Hatakoshi, G.
Author_Institution
Toshiba Corp. Res. & Dev. Center, Kawasaki, Japan
Volume
28
Issue
21
fYear
1992
Firstpage
1950
Lastpage
1952
Abstract
An InGaAlP laser operating under continuous wave excitation, having a record short wavelength of 625 nm at room temperature has been constructed. This was accomplished employing a tensile strained ( Delta a/a=-1%) multiquantum well active region and a six pair multiquantum barrier structure.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 625 nm; CW operation; InGaAlP laser; continuous wave excitation; multiquantum barrier structure; multiquantum well active region; orange light emission; room temperature; tensile strained MQW;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921250
Filename
170854
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