A novel 1.55 μm dual-mode SSO/MSM photodetector

Author

Lin, S.M. ; Huang, F.H. ; Lin, C.K. ; Yang, S.C. ; Lin, Y.H. ; Yu, Y.C. ; Chan, Y.J.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan

Volume

15

Issue

10

fYear

2003

Firstpage

1440

Lastpage

1442

Abstract

This report proposes an integrated dual-mode photodetector, for 1.55-μm fiber optoelectronic receiver applications that incorporates metal-semiconductor-metal (MSM) and novel Schottky-semiconductor-ohmic (SSO) photodetectors. Both the dc characteristics and the high-frequency response have been investigated and characterized. Better dc and transit performance was achieved during SSO-mode operation under a low dc biasing condition.

Keywords

Schottky barriers; infrared detectors; integrated optics; metal-semiconductor-metal structures; ohmic contacts; optical communication equipment; photodetectors; 1.55 micron; SSO-mode operation; Schottky-semiconductor-ohmic photodetectors; dual-mode SSO/MSM photodetector; fiber optoelectronic receiver; high-frequency response; integrated dual-mode photodetector; low de biasing condition; Bandwidth; Capacitance; Dark current; Educational institutions; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Pulse measurements; Schottky barriers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818255

Filename

1232984