DocumentCode
786578
Title
Radiation Damage in Lithium Doped Silicon
Author
Carter, J.R., Jr.
Author_Institution
TRW Systems Bldg. Rl, Rm. 2006 One Space Park Redondo Beach, California 90278
Volume
14
Issue
6
fYear
1967
Firstpage
110
Lastpage
115
Abstract
Majority carrier removal rates for electron irradiation were studied in lithium doped float zone silicon. The removal appears to be due to reaction of lithium donors with displacement products to form uncharged complexes. A time dependent removal was observed after termination of the radiation. An exponential removal of carriers with electron fluence was also observed.
Keywords
Annealing; Atomic measurements; Diodes; Electrons; Impurities; Lithium; Photovoltaic cells; Silicon devices; Spontaneous emission; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1967.4324782
Filename
4324782
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