• DocumentCode
    786678
  • Title

    Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature

  • Author

    Kuo, J.B. ; Sim, J.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    28
  • Issue
    21
  • fYear
    1992
  • Firstpage
    1983
  • Lastpage
    1984
  • Abstract
    A unique delayed-turn-on phenomenon in an accumulation-type SOI pMOS device operating at 77 K based on the low-temperature PISCES simulation is reported. As compared with the 300 K case, in the delayed-turn-on region, the accumulation-type SOI pMOS device at 77 K may not provide a larger transconductance as a result of the carrier freezeout effects in the thin film.
  • Keywords
    accumulation layers; cryogenics; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; 77 K; Si-SiO 2; accumulation-type SOI pMOS device; carrier freezeout effects; delayed-turn-on phenomenon; drain current; low-temperature PISCES simulation; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921271
  • Filename
    170875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786678