• DocumentCode
    78684
  • Title

    2-tap pre-emphasis SST transmitter with skin effect loss equalisation in 65 nm CMOS technology

  • Author

    Ke Huang ; Ziqiang Wang ; Xuqiang Zheng ; Chun Zhang ; Zhihua Wang

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    50
  • Issue
    25
  • fYear
    2014
  • fDate
    12 4 2014
  • Firstpage
    1910
  • Lastpage
    1912
  • Abstract
    A 2-tap pre-emphasis SST transmitter with skin effect loss equalisation is presented. The transmitter features the ability of compensating the low frequency loss caused by the channel skin effect. The transmitter equalisation coefficient setting and driver impedance adjustment are mutually decoupled. Fabricated in 65 nm CMOS technology, the transmitter can operate up to 20 Gbit/s while consuming 39 mW of power under a 1 V power supply. The skin effect loss equalisation is verified with a 24-inch FR4 channel under an 8 and 9 Gbit/s data rate.
  • Keywords
    CMOS integrated circuits; equalisers; skin effect; transmitters; 2-tap pre-emphasis SST transmitter; CMOS technology; FR4 channel; bit rate 8 Gbit/s; bit rate 9 Gbit/s; channel skin effect loss equalization; driver impedance adjustment; low frequency loss compensation; power 39 mW; size 24 inch; size 65 nm; transmitter equalisation coefficient; voltage 1 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2466
  • Filename
    6975774