DocumentCode
787699
Title
Charge Collection Efficiencies for Lithium-Drifted Silicon and Germanium Detectors in the X-Ray Energy Region
Author
Zulliger, H.R. ; Aitken, D.W.
Author_Institution
Department of Physics and High Energy Physics Laboratory Stanford University Stanford, California
Volume
15
Issue
1
fYear
1968
Firstpage
466
Lastpage
474
Abstract
Theoretical calculations showing the charge collection efficiencies of Ge(Li) and Si(Li) planar detectors as a function of trapping lengths and incident X-ray energies are presented. It is demonstrated that there should be an intrinsic energy dependence of the charge collection efficiency for radiation lengths comparable to the detector depletion depth. The nonlinear behavior is generally greater for unequal hole and electron trapping lengths. Experimental results confirm this in part, but surface effects appear to accentuate the effect. It is concluded that, neglecting surface effects, the nonlinearities should be eliminated if the radiation is incident in a direction perpendicular to the field. Highest charge collection efficiency, best resolution and linearity are obtained by injecting the photons through the detector side (perpendicular to the field) along a unique plane which is defined by the electron to hole trapping ratio.
Keywords
Charge carrier processes; Electromagnetic wave absorption; Electron traps; Energy measurement; Germanium; Linearity; Radiation detectors; Silicon; X-ray detection; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1968.4324888
Filename
4324888
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