Thick yttrium-iron-garnet (YIG) films produced by pulsed laser deposition (PLD) for integration applications

Author

Buhay, H. ; Adam, J.D. ; Daniel, M.R. ; Doyle, N.J. ; Driver, M.C. ; Eldridge, G.W. ; Hanes, M.H. ; Messham, R.L. ; Sopira, M.M.

Author_Institution

Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3832

Lastpage

3834

Abstract

High magnetic and dielectric quality, thick (50-100 μm), epitaxial, yttrium-iron-garnet (YIG) films were deposited at high rate by PLD. A two-step (low temperature deposition followed by rapid thermal anneal) low thermal budget PLD process was demonstrated suitable to deposit thick polycrystalline YIG films on metallized Si and GaAs. A modified PLD apparatus is used to deposit uniform, 80-100 μm, thick YIG films on 3-inch semiconductor wafers for integrated microwave circulator fabrication

Keywords

garnets; magnetic epitaxial layers; magnetic microwave devices; microwave circulators; microwave integrated circuits; pulsed laser deposition; rapid thermal annealing; vapour phase epitaxial growth; yttrium compounds; 3 in; 50 to 100 mum; 80 to 100 mum; GaAs; PLD; Si; YFe5O12; YIG; YIG films; epitaxial YIG films; high dielectric quality; high magnetic quality; high rate deposition; integrated microwave circulator fabrication; integration applications; low temperature deposition; metallized GaAs; metallized Si; pulsed laser deposition; rapid thermal annealing; semiconductor wafers; thick polycrystalline YIG films; two-step low thermal budget PLD process; yttrium-iron-garnet films; Dielectrics; Magnetic films; Metallization; Optical pulses; Pulsed laser deposition; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Temperature; Yttrium;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.489787

Filename

489787