• DocumentCode
    788758
  • Title

    Activation Energy of Defects in Neutron Irradiated Silicon

  • Author

    Price, J.C. ; Kiss, A.E.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, England
  • Volume
    15
  • Issue
    4
  • fYear
    1968
  • Firstpage
    3
  • Lastpage
    5
  • Abstract
    Annealing studies of defects introduced in Si by a fast neutron flux have been made, using planar transistor samples to follow changes in minority carrier lifetime. An activation energy of 1.2 ± 0.1 eV was obtained from measurements of annealing over the range 100°C to 156°C.
  • Keywords
    Annealing; Boron; Charge carrier lifetime; Inductors; Laboratories; Neutrons; Radiative recombination; Silicon; Telecommunication standards; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1968.4324996
  • Filename
    4324996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=788758