1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

Author

Kasukawa, A. ; Imajo, Yoshihiro ; Makino, Tatsuya

Author_Institution

Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

Issue

fYear

1989

Firstpage

104

Lastpage

105

Abstract

Reports the first successful demonstration of a 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SC-MQW LD) entirely grown by three-step low pressure metal-organic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4 kA/cm²) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.

Keywords

CVD coatings; III-V semiconductors; gallium arsenide; gradient index optics; indium compounds; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; 1.3 micron; 31 mA; 65 K; GaInAsP-InP; buried heterostructure graded index separate confinement multiple quantum well; characteristic temperature; differential quantum efficiency; metalorganic chemical vapour deposition; three-step low pressure; threshold current; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890077

Filename

14247

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=788765