• DocumentCode
    788829
  • Title

    Influence of the spin structure on the exchange bias of antiferromagnetic and ferromagnetic bilayer

  • Author

    Mitsumata, C. ; Sakuma, A. ; Fukamichi, K.

  • Author_Institution
    Adv. Electron. Res. Lab., Hitachi Metals Ltd., Kumagaya, Japan
  • Volume
    39
  • Issue
    5
  • fYear
    2003
  • Firstpage
    2738
  • Lastpage
    2740
  • Abstract
    The exchange coupling bias field in the antiferromagnetic (AFM) and ferromagnetic bilayer system is investigated within the framework of the classical Heisenberg model. The spin structures in L10-type ordered and disordered γ phase of AFM alloys including magnetic and nonmagnetic atoms are calculated, and the magnetization loops are obtained by using the Landau-Lifshitz motion equation. The AFM layer having the 3Q structure can generate an exchange bias field. However, no magnetization loop shift can be obtained in cases of the 1Q, 2Q, and AF-I structures of AFM alloys.
  • Keywords
    Heisenberg model; exchange interactions (electron); interface magnetism; magnetic thin films; magnetisation; L10-type ordered phase; Landau-Lifshitz motion equation; alloys; antiferromagnet-ferromagnet bilayer; classical Heisenberg model; disordered γ phase; exchange coupling bias field; magnetization loops; Anisotropic magnetoresistance; Antiferromagnetic materials; Atomic layer deposition; Equations; Helium; Magnetic anisotropy; Magnetic domain walls; Magnetic memory; Magnetization; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.815582
  • Filename
    1233202