• DocumentCode
    789414
  • Title

    Radiation Hardness of Ovonic Devices

  • Author

    Ovshinsky, Stanford R. ; Evans, E.J. ; Nelson, D.L. ; Fritzsche, H.

  • Author_Institution
    Energy Conversion Devices, Inc. Troy, Michigan 48084
  • Volume
    15
  • Issue
    6
  • fYear
    1968
  • Firstpage
    311
  • Lastpage
    321
  • Abstract
    Ovonic threshold switches have been exposed to pulses of flash X-rays to levels of 1.8×1011 rads/sec and to fast neutron fluences of as high as nvt = 1.2×1017 n/cm2. The switching devices have continued to function during the transient of the X-ray flash and experienced no permanent damage or change of their electrical parameters in excess of the resolution of the experimental testing procedure which was about ±100% in the case of the neutron exposure.
  • Keywords
    Amorphous materials; Atomic measurements; Circuit testing; Electrodes; Energy conversion; Ionizing radiation; Neutrons; Power semiconductor switches; Switching circuits; X-rays;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1968.4325062
  • Filename
    4325062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=789414