Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs

Current collapse in (Al,Ga)N/GaN HFETs is generally associated with electrical stresses in the gate-to-drain region. It is demonstrated through pulsed I-V measurements that the source access region can also give rise to severe current collapse in (Al,Ga)N/GaN HFETs. The effect is of significance to the design of (Al,Ga)N/GaN HFET high-efficiency power amplifiers and transmit/receive (T/R) switches because such circuits often result in electrical stresses to the gate-source region.