The blocking barrier effect on aluminum electromigration due to titanium layers in multilayered interconnects of LSI´s

Author

Koizumi, Hiroshi ; Hiraoka, Kazunori

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

16

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

298

Lastpage

300

Abstract

Experimental evidence of an increase in the resistance of a cathode-side metal line without any void generation is presented for a multilayered metal structure terminated by via-holes during electromigration tests. This resistance increase is reversed to the initial value by high temperature storage after electromigration testing. The increase in the resistance of multilayered metal structures is attributed to the vacancy accumulation in the cathode side due to the blocking barrier effect of the refractory metal layer in the via-hole.<>

Keywords

electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; large scale integration; titanium; Al electromigration; Al-Ti; LSI; blocking barrier effect; cathode-side metal line; electromigration testing; high temperature storage; multilayered interconnects; refractory metal layer; resistance increase; vacancy accumulation; via-hole terminations; Aluminum; Cathodes; Electrical resistance measurement; Electrodes; Electromigration; Metallization; Ovens; Temperature; Testing; Titanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.388713

Filename

388713