DocumentCode
793009
Title
Design optimization and implementation of a microgravity capacitive HARPSS accelerometer
Author
Monajemi, Pejman ; Ayazi, Farrokh
Author_Institution
Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
6
Issue
1
fYear
2006
Firstpage
39
Lastpage
46
Abstract
This paper reports on the design optimization and implementation of a lateral capacitive accelerometer with high sensitivity and micro-g resolution, fabricated through the high-aspect ratio polysilicon and single-crystal silicon process on regular silicon wafers. A new implementation of vertical corrugation in silicon electrodes is developed to reduce the mechanical noise equivalent acceleration of the sensor. The predicted effect of corrugation on thermomechanical noise and also on static sensitivity is verified using ANSYS steady-state thermal simulation and FEMLAB linear stationary electrostatics analysis, respectively. The number of corrugated electrodes and the sense gap spacing is optimized to minimize the system (sensor + circuit) noise floor, while satisfying process and electronics limits. The open-loop differential sensitivity of a 60-μm-thick prototype accelerometer is measured to be 0.25 V/g equivalent to 4.5 pF/g over a 1-g range. The estimated total noise equivalent acceleration of the system (sensor + circuit) is 0.95 μg/√Hz in atmosphere.
Keywords
accelerometers; capacitive sensors; design; electrodes; optimisation; silicon; zero gravity experiments; 60 micron; corrugated silicon electrodes; design optimization; high-aspect ratio polysilicon process; lateral capacitive accelerometer; mechanical noise equivalent acceleration; microgravity capacitive HARPSS accelerometer; open-loop differential sensitivity; sense gap spacing optimization; single-crystal silicon process; static sensitivity; thermomechanical noise; Acceleration; Accelerometers; Circuit noise; Design optimization; Electrodes; Mechanical sensors; Noise reduction; Sensor systems; Silicon; Thermomechanical processes; Accelerometer; high-aspect ratio polysilicon and single-crystal silicon process (HARPSS); noise-equivalent acceleration (NEA); single-crystal silicon (SCS);
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2005.854134
Filename
1576751
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