• DocumentCode
    793816
  • Title

    Effects of 600 MeV Protons on M.O.S. Transistors

  • Author

    Rouanet, J.C. ; Giraud, J.L. ; de Lafond, Y.Gervais

  • Author_Institution
    Centre d´´Etude Spatiale des Rayonnements Toulouse - France
  • Volume
    16
  • Issue
    5
  • fYear
    1969
  • Firstpage
    106
  • Lastpage
    108
  • Abstract
    This paper deals with a brief report of the irradiation of M.O.S.T. at C.E.R.N., using 600 MeV protons. The behavior of two fundamental parameters : the treshold voltage and the mobility of the holes in the channel were studied using p-channel transistors.
  • Keywords
    Channel capacity; Degradation; Electrons; Equations; Photomultipliers; Protons; Silicon; Stochastic processes; Synchrocyclotrons; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1969.4325482
  • Filename
    4325482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=793816