• DocumentCode
    794926
  • Title

    Low resistance 1.55 μm InGaAsP/InP semi-insulating buried heterostructure laser diodes using a multilayer contact structure

  • Author

    Matsumoto, S. ; Iga, R. ; Kadota, Y. ; Yamamoto, M. ; Fukuda, M. ; Kishi, K. ; Itaya, Y.

  • Author_Institution
    NTT Opto-Electron. Labs., Atsugi, Japan
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    882
  • Lastpage
    883
  • Abstract
    An InGaAsP (λg=1.3 μm) buffer layer, inserted between an InGaAs contact layer and an InP cladding layer, efficiently reduces the differential resistance of laser diodes at a threshold current of 10 mA. Laser diodes using this multilayer contact structure show long-term stable operation of more than 104 h at 50°C
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser stability; laser transitions; semiconductor lasers; 1.55 micron; 10 mA; 1E4 hr; 50 C; InGaAs contact layer; InGaAs-InGaAsP-InP; InGaAsP buffer layer; InP cladding layer; buried heterostructure; differential resistance reduction; laser diodes; long-term stable operation; multilayer contact structure; semi-insulating BH LDs; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950604
  • Filename
    390928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794926