• DocumentCode
    794939
  • Title

    Stabilization of positive charge in SiO/sub 2//Si/sub 3/N/sub 4/ electrets

  • Author

    Leonov, V. ; Fiorini, P. ; Van Hoof, C.

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven
  • Volume
    13
  • Issue
    5
  • fYear
    2006
  • Firstpage
    1049
  • Lastpage
    1056
  • Abstract
    The stability of charge storage in electrets is a key parameter for their use in practical devices. For this purpose a new charging procedure for SiO2/Si3N4 thin film electret on a silicon carrier has been developed. It combines a heat-treatment at 450degC with a hexamethyldisilazane treatment before charging of the electret. The retention of a positive charge and the stability of its spatial trapping are investigated. The optimized technological parameters provide a lifetime of the charge on open air of about 200 years. No spatial charge retrapping has been observed after fabrication of the electret. A set of experiments has been carried out to characterize the properties of the charged electrets and to stabilize the charge retention using heat treatment at temperatures up to 450degC after charging, which is important for their packaging at elevated temperatures
  • Keywords
    carrier lifetime; dielectric thin films; electrets; heat treatment; silicon compounds; 450 C; SiO2-Si3N4; charge storage; heat-treatment; hexamethyldisilazane treatment; positive charge; silicon carrier; spatial charge retrapping; spatial trapping; thin film electret; Electrets; Fabrication; Heat treatment; Microelectronics; Micromechanical devices; Semiconductor films; Silicon; Stability; Temperature; Wireless sensor networks;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2006.247831
  • Filename
    1714929