DocumentCode
795006
Title
Optimization of buffer stages in bipolar VLSI systems
Author
Konstadinidis, Georgios K. ; Berger, Horst H.
Author_Institution
Inst. of Microelectron., Tech. Univ. of Berlin, Germany
Volume
27
Issue
7
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
1002
Lastpage
1013
Abstract
Discusses the power-delay optimization of emitter followers, of level shifters used in cascode emitter coupled logic (CECL) VLSI systems, and of Darlington buffers. Quasi-linear large-signal circuit models are developed. From these, analytical delay expressions for all these buffer stages in high-speed operation, where the driving capability is substantially reduced, are extracted. In addition, the critical bias current for minimum power-delay product is determined. Basically, the same delay expressions apply also to BiCMOS buffers. The simplicity of these expressions allows a fast optimization procedure, with little loss of accuracy, as the calculation results deviate from simulation mostly less than 5%.
Keywords
BIMOS integrated circuits; VLSI; bipolar integrated circuits; buffer circuits; emitter-coupled logic; BiCMOS buffers; Darlington buffers; bipolar VLSI systems; buffer stages; cascode emitter coupled logic; critical bias current; delay expressions; emitter followers; high-speed operation; large-signal circuit models; level shifters; power-delay optimization; Accuracy; BiCMOS integrated circuits; Circuit simulation; Coupling circuits; Delay; Delay estimation; Logic; Microelectronics; Power dissipation; Power system modeling; Ring oscillators; System performance; Very large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.142595
Filename
142595
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