• DocumentCode
    795460
  • Title

    Structure-dependent noise characteristics of transverse mode stabilised AlGaInP laser diodes

  • Author

    Hatakoshi, G. ; Ishikawa, Masatoshi ; Watanabe, Yoshihiro ; Uematsu, Yutaka

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    The oscillation spectra and noise characteristics of AlGaInP lasers are shown to depend on the ridge structure. Relatively narrow current injection width and wide optical field are realised in a
  • Keywords
    III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; gallium compounds; laser modes; optical waveguides; semiconductor junction lasers; stability; III-V semiconductors; low noise characteristics; narrow current injection width; oscillation spectra; ridge structure; self-pulsation; semiconductor lasers; stabilised AlGaInP laser diodes; structure dependent noise characteristics; transverse mode; visible light type; wide optical field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890092
  • Filename
    14262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795460